NDLI: 200°C/5 MHz GaN-based gate driver circuits with 1 nF/4.7 Ω RC load for high-temperature high-frequency all-GaN IC applications

Content Provider	IET Digital Library
Author	Xu, Zhe Zhou, Yang Xin, Xiong Wang, Wenjie Xie, Wuze Li, Juntao
Abstract	A GaN-based gate driver circuits have been successfully designed and fabricated using a commercially available 6-inch GaN-on-Si platform. The driver circuits consist of three-stage direct-coupled FET logic (DCFL) inverters featuring monolithically integrated depletion-mode (D-mode) and enhancement-mode (E-mode) high electron mobility transistors (HEMTs). At room temperature (RT), at a supply voltage of 4 V the single-stage DCFL fabricated on the same die exhibits a large gate swing (3.84 V) and large noise margins (logic-low noise margin (NML) of 1.55 V and logic-high noise margin (NMH) of 2.18 V), both of which are desirable for all-GaN IC applications. Meanwhile, the gate driver circuits were characterised up to 200°C on a PCB with a capacitance load of 1 nF in series with 4.7 Ω resistance to resemble the load condition. At 200°C, the gate driver circuits function well even at 5 MHz operation frequency. The turn on/off propagation delay and rise/fall time of the gate driver circuits are 5/40 and 22/18 ns, respectively. As far as the authors’ knowledge, this is the highest reported operation frequency for GaN-based gate driver circuits under such high temperature, making it very promising for high-temperature high-frequency all-GaN integrated circuit (IC) applications.
Starting Page	1200
Ending Page	1202
Page Count	3
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 22, Oct (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/22
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.1603
Journal	Electronics Letters
Publisher Date	2020-09-25
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Aluminium Compound Capacitance 1.0 NF DCFL Inverters Depletion-mode HEMT Driver Circuit Elemental Semiconductor Enhancement-mode Enhancement-mode HEMT FET Logic Inverter Field Effect Device Field Effect Integrated Circuit Frequency 5.0 MHz Gallium Compound GaN-Si Gate Driver Circuit Gate Swing HEMT Integrated Circuit High-temperature High-frequency IC Application III-V SemiConductor Integrated Circuit Application Logic Circuit Logic Gate Logic-high Noise Margin Logic-low Noise Margin Monolithically Integrated Depletion-mode Monolithically Integrated HEMT PCB Power Electronics Power Supply RC Load Resistance 4.7 Ohm Silicon Size 6 Inch Supervisory Circuit Temperature 200.0 DegC Temperature 293 K to 298 K Three-stage Direct-coupled FET Logic Inverter Time 18 Ns Time 22 Ns Time 22.0 Ns Time 40 Ns Time 5 Ns Turn On-off Propagation Delay Voltage 1.55 V Voltage 2.18 V Voltage 3.84 V Voltage 4.0 V Wide Band Gap SemiConductor
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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