NDLI: Optimization of surface passivation for suppressing leakage current in GaSb PIN devices

Content Provider	IET Digital Library
Author	Ji, Y. Rahman, K. M. Azizur Chang, T. Juang, B. C. Prout, D. L. Liang, B. Huffaker, D. L. Chatziioannou, A. F.
Abstract	The suppression of leakage current via surface passivation plays a critical role for GaSb-based optoelectronic devices. In this Letter the authors carefully optimise the sulfur passivation parameters for improving the performance of GaSb p–i–n devices. Two competing processes are evaluated during the sulfur passivation process: the hydrolysis of HS– ions that aide surface passivation and the re-oxidation, respectively. Upon the optimisation of sulfur passivation parameters and subsequent encapsulation with atomic layer deposition Al2O3, the surface resistivity significantly increased from 4.3 kΩ.cm to 28.6 kΩ.cm, leading to a 19.1 times drop in dark current at room temperature for the GaSb p–i–n structure. This Letter provides a repeatable and stable passivation approach for improving the optoelectronic performance of GaSb-based devices.
Starting Page	1420
Ending Page	1423
Page Count	4
ISSN	00135194
Volume Number	56
e-ISSN	1350911X
Issue Number	Issue 25, Dec (2020)
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/el/56/25
Alternate Webpage(s)	https://digital-library.theiet.org/content/journals/10.1049/el.2020.2063
Journal	Electronics Letters
Publisher Date	2020-11-03
Access Restriction	Open
Rights Holder	© The Institution of Engineering and Technology
Subject Keyword	Al2O3 Aluminium Compound Atomic Layer Deposition Competing Processes Gallium Compound GaSb III-V SemiConductor Junction And Barrier Diode Leakage Current Leakage Current Suppression Optoelectronic Device Optoelectronic Performance P-i-n Diode Passivation P–i–n Devices P–i–n Structure Re-oxidation Repeatable Passivation Approach Semiconductor Technology Stable Passivation Approach Subsequent Encapsulation Sulfur Passivation Parameter Sulfur Passivation Process Surface Passivation Optimization Surface Resistivity Surface Topography Measurement Temperature 293 K to 298 K Vacuum Deposition
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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