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| Content Provider | IET Digital Library |
|---|---|
| Author | Huang, Li Xu, Gaoming Huang, Jifu Liu, Taijun |
| Abstract | This letter presents an analogue predistorter (APD) named Schottky diode (SD) and field effect transistor (FET)‐paralleled APD (SDFP‐APD) for the fifth‐generation (5G) mobile system, which is composed of an FET paralleled with two SDs. The simulation results show that the SDFP‐APD has the best compression compensation for the radio frequency power amplifier (RFPA) among the SD‐APD, the FET‐APD and the SDFP‐APD. Furthermore, the measurement results illustrate that the SDFP‐APD can improve the adjacent channel leakage ratio of the RFPA with the best linearisation performance among the three APDs and reduce the error vector magnitude while applying a 100‐MHz bandwidth 5G new radio signal. The proposed SDPF‐APD can be a promising linearisation technique for 5G small‐cell base stations. The authors would like to thank the support of the National Key R&D Program of China (2018YFB1802100), the National Natural Science Foundation of China (62071264, 61631012 and U1809203), the Fundamental Research Funds for the Provincial Universities of Zhejiang (SJLY2020013) and the Natural Science Foundation of Zhejiang Provence (LY21F010004). |
| Starting Page | 235 |
| Ending Page | 237 |
| Page Count | 3 |
| Volume Number | 57 |
| e-ISSN | 1350911X |
| Issue Number | Issue 6, Mar (2021) |
| Alternate Webpage(s) | https://ietresearch.onlinelibrary.wiley.com/doi/10.1049/ell2.12114 |
| Alternate Webpage(s) | https://ietresearch.onlinelibrary.wiley.com/toc/1350911x/2021/57/6 |
| Journal | Electronics Letters |
| Publisher Date | 2021-02-23 |
| Access Restriction | Open |
| Rights Holder | © The Institution of Engineering and Technology |
| Content Type | Text |
| Resource Type | Article |
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