NDLI: Compact High Voltage IGBT Switch for Pulsed Power Applications

Content Provider	IEEE Xplore Digital Library
Author	Zorngiebel, V. Spahn, E. Buderer, G. Welleman, A. Fleischmann, W.
Copyright Year	2008
Abstract	This paper describes the development of a semiconductor based switch for use in pulsed power technology. Because of the more stable operating conditions, given by the semiconductor devices, this switch could be used to replace the up to now in pulsed power technology common used spark gaps. We defined a technical concept for a semiconductor based switch with a maximum voltage of 20 kV and a current capability in the order of 1 kA. This concept also should enable to generate pulses widths of a few mus. We found an IGBT with a maximum blocking voltage of 1700 V, a signal rise time of 100 ns, and a short circuit current rate of 650 A to be suited to realize our concept for the switch. Because of the defined maximum voltage of 20 kV it was necessary to use a series connection of the IGBTs. To ensure a synchronous switching of the in series connected devices, a trigger unit was built up which was inductively connected to the driver circuits of the single IGBTs. Single devices where tested and separated for the series connection. With the handicap of a given 155 mm circuit board we designed a complete switch, basing on industrial standards, with 15 IGBTs and a finally maximum blocking voltage of 18 kV, and a current capability of 500 A. The design of this circuit also included the development of a protecting circuit (active clamp) to protect the single devices of an over voltage damage during the switching, and also to avoid an inhomogeneous split up of the voltage to the different devices.
Starting Page	1
Ending Page	5
File Size	1010530
Page Count	5
File Format	PDF
ISBN	9781424418329
DOI	10.1109/ELT.2008.21
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-06-10
Publisher Place	Canada
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Ferrites Resistors Semiconductor device measurement Switches Logic gates Clamps
Content Type	Text
Resource Type	Article

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