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2015 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)

2013 IEEE International Meeting for Future of Electron Devices, Kansai

2012 IEEE International Meeting for Future of Electron Devices, Kansai

2011 International Meeting for Future of Electron Devices

Table of contents

Keynote speeches

Structure analysis of nanoparticle catalysts by environmental transmission electron microscopy

Single atom calculation in silicon

Small, soft, safe micromachine for minimally invasive surgery

The role of high-doped source and drain on device performance in nano-scale Si-MOSFETs

Single-photon detection by SOI MOSFET

Special invited session

On-chip Robotics for biomedical innovations

Technical session A

Fabrication of semiconductor nanoparticles using electro spray deposition method

Electrical and structural properties of organic thin-film transistor using very thin pentacene film

Tight binding modeling of intermediate band solar cells based on InAs/GaAs quantum dot arrays

Technical session B

Performance improvement of metal-gate/high-k CMOS by NiPt-silicidation using laser annealing

Design consideration of 0.4V-operation SOTB MOSFET for super low power application

Dependence of electrical characteristics of TDTFT on asymmetry of tunneling dielectric film

Thin film transistors and photo diodes fabricated on double-layered polycrystalline silicon films formed by green laser annealing

Social infrastructure watch by RF recognition system and sensors

New statistical optimization method in fabricating 65nm MOSFET transistors using Monte Carlo and Dual Pearson models

Cross-current-tetrode (XCT) SOI MOSFET for future ultra-low power application

An estimation of saturation current influenced by source and drain resistances for sub-20nm MOSFETs

An estimation of inversion-layer EOT influenced by quantum effects for sub-20nm MOSFETs

Control of crystalline orientation and diameter of Si nanowires based on VLS method and electrodeposition of catalyst using AAO template

Reconsideration of minority carrier diffusion in nanoscale wire Si pn junction

Effects of a strained layer on transport characteristics of tunnel transistors

Formation of electroless barrier for all-wet process of TSV in 3D-LSI technology and evaluation of its adhesion property

Drain current - gate voltage characteristics of Si MOSFETs fabricated on Si-on-SiC wafers

High-quality single-crystal SiGe layers on insulator formed by rapid melt growth

Laser direct patterning of Si films by Ag-induced layer exchange

Microscopic electrical characterization of fixed-charge-controlled passivation films for Si solar cells

Correlation between surface morphology and breakdown characteristics of thermally grown SiO2 dielectrics in 4H-SiC MOS devices

Effect of higher conduction band on electron mobility in 4H-SiC inversion layers

Temperature-dependent reverse leakage current characterization of n-GaN Schottky diodes

C-V characterization of n-GaN MOS diodes with an ALD Al2O3 dielectric layer

Low temperature processed ZnO thin film transistors fabricated by plasma assisted atomic layer deposition

Preparation of ZnO thin films by plasma-assisted atomic layer deposition for the application to thin film transistors

Irradiation effect of 8 MeV protons on single-crystalline zinc oxide

Radiation-proof characteristic of ZnO/ZnMgO HFETs

Flexible zinc oxide thin-film transistors using oxide buffer layers on polyethylene napthalate substrates

Impact of atomization treatment on ZnS phosphor for inorganic EL

Tailoring the electronic properties of vertically stacked quantum-dots by local potential modulation

Fabrication and characterization of antimonide-based composite-channel InAs/AlGaSb HFETs using high-k gate insulators

Resistance switching phenomenon in nano-conduction path formed by dielectric breakdown

NEGF simulation of spin-transfer torque in magnetic tunnel junctions

Application of endohedral iron-oxide ferritin to resistive memory

Fabrication of PbTiO3 and Pt self-organized nanocrystal array structure on atomically flat sapphire

Investigation of SrBi4Ti4O15/CaBi4Ti4O15 thin film capacitor for excellent electric stability

Effects of inserting ultrathin TaOx layer in Pt/TiO2 interface on resistive switching characteristics

Increase in resistivity of indium-tin-oxide films spin-coated on titanium-dioxides

Analysis of electronic structure in quantum dot arrays for intermediate band solar cells

Low-temperature crystallization of amorphous Ge thin films using metal nanoparticles

Characterization of transient drain current overshoot in poly-Si TFTs

Characteristics of solution-processed TFTs with In4ZnOx/SrTa2O6 thin films

Advantage of high-density plasma nitridation for improving thermal stability of ultrathin GeO2 on Ge(100)

Artificial neural network using poly-Si TFTs - verification of multiple overwriting -

Effect of uniaxial strain on the electronic transport in single layer graphene

Spectroscopic study on impact of alcohol intake on bio-impedance of human body

Fabrication and axial sensitivity analysis of vibratory piezoelectric cantilever sensors for three-axis tactile sensing

Analysis of hall effect in micro poly-Si Hall devices with p-type doping films for magnetic area sensors

International Meeting for Future of Electron Devices, 2004.

Preface

Content Provider	IEEE Xplore Digital Library
Author	Akasaka, Yoichi Omura, Yasuhisa
Copyright Year	2011
Description	Author affiliation: Osaka University, Japan (Akasaka, Yoichi) \|\| Kansai University, Japan (Omura, Yasuhisa)
Abstract	The International Meeting for Future of Electron Devices, Kansai (IMFEDK) was established in 2003 to provide an international opportunity for technical discussion in Kansai, Japan. Multidisciplinary discussions by various researchers and engineers from different point of views are much expected in the meeting for creating embryos of science and/or technology to be the main stream in future. That is why the meeting is set to cover all areas of electron devices in both theories and experiments ranging from fundamentals to feasibility studies including applications. This year, 6 outstanding invited papers, 7 oral papers and 42 poster papers are included in the conference. We hope the conference to be the best and exciting place for young researchers to discuss, since they must be essential in the future activities on science and technologies.
Starting Page	1
Ending Page	1
File Size	53524
Page Count	1
File Format	PDF
ISBN	9781612841458
e-ISBN	9781612841472
DOI	10.1109/IMFEDK.2011.5944817
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-19
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Industries Humans Companies Inspection Distance measurement Electron devices Monitoring
Content Type	Text
Resource Type	Article

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