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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kelly, D.Q. Wiedmann, I. Garcia Gutierrez, D.I. Yacaman, M.J. Banerjee, S.K. |
| Copyright Year | 2006 |
| Description | Author affiliation: Microelectron. Res. Center, UT-Austin, Austin, TX (Kelly, D.Q.; Wiedmann, I.) |
| Abstract | Germanium-carbon alloys $(Ge_{1-x}C_{x})$ were first deposited on Si (100) by chemical vapor deposition using precursors containing Ge-C bonds. The stated objective of that work was to explore $Ge_{1-x}C_{x}$ as a potentially lattice-matched system with Si capable of bandgap engineering. In step with renewed interest in Ge MOSFET devices due to the advent of high-kappa dielectrics, our group has revisited $Ge_{1-x}C_{x}$ recently, and for the first time demonstrated pMOSFETs with enhanced hole mobility fabricated on thin (30 nm) $Ge_{1-x}C_{x}layers$ deposited directly on Si. This abstract presents previously unreported yet relevant materials-related details of the $Ge_{1-x}C_{x}$ films. The key result is that the $Ge_{1-x}C_{x}$ films exhibit remarkably low threading dislocation densities despite significant strain relaxation |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 2318022 |
| Page Count | 2 |
| File Format | |
| ISBN | 1424404614 |
| DOI | 10.1109/ISTDM.2006.246590 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-05-15 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Atomic force microscopy Transmission electron microscopy Silicon Etching Capacitive sensors Helium Chemical vapor deposition Inductors Substrates MOS devices |
| Content Type | Text |
| Resource Type | Article |
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