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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Silva, O. Angelov, I. Zirath, H. Rorsman, N. |
| Copyright Year | 2014 |
| Description | Author affiliation: Microwaves Electron. Lab., Chalmers Univ. of Technol., Göteborg, Sweden (Silva, O.; Angelov, I.; Zirath, H.; Rorsman, N.) |
| Abstract | A combination of techniques for designing high linearity power amplifiers under controlled junction temperature required for space applications is explained and demonstrated. Junction temperature calculation is taken into account in the transistor selection to ensure high reliability operation and is verified by IR measurement. A non linear model is used to accurately predict harmonics generation and intermodulation products. Optimal bias point and loads are chosen to improve the linearity performance. The design method is demonstrated in a C band high linearity GaAs MMIC power. The techniques described lead to an output 1 dB compression point of 26.6 dBm, saturated power 28.9 dBm and PAE 20.9%, with a gain higher than 30 dB. The output third order intercept point (OIP3) reaches levels over 40 dBm with power consumption less than 2 W. The design keeps the critical junction temperature under 108°C and de-rating drain bias of 4 volts is used. |
| Sponsorship | IEEE Microw. Theory Tech. Soc. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 772584 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781479934546 |
| DOI | 10.1109/INMMIC.2014.6815096 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-04-02 |
| Publisher Place | Belgium |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | power amplifier Temperature modeling Temperature measurement C-Band Power amplifiers Linearity MMICs Transistors Junctions Junction temperature high linearity bus-bar combiner |
| Content Type | Text |
| Resource Type | Article |
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