NDLI: A Frequency-Domain Spectral-Balance Quasi-Two-Dimensional Approach for the Simulation of Nonlinear Devices and Circuits

Content Provider	IEEE Xplore Digital Library
Author	Leuzzi, G. Stornelli, V.
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. Eng., L'Aquila Univ. (Leuzzi, G.; Stornelli, V.)
Abstract	In this paper a quasi-two-dimensional hydrodynamic physical model of a MOSFET device is presented, for computer-aided numerical simulation. Entirely developed in the frequency domain using the spectral balance technique, the model is based on the numerical solution of one-dimensional Poisson's equation and of the first three moments of Boltzmann's semiclassical transport equation in the longitudinal direction along the channel, self-consistently coupled to a vertical charge-control model between gate and channel. The equations are discretised in the space variable, and expanded in Fourier series in the time variable. The completely frequency-domain approach allows easy inclusion of frequency-dependent parameters of the semiconductor, especially important at very high frequencies (e.g. dielectric constant), and easy and straightforward coupling to the passive external environment. The absence of time-frequency domain transformations typical of Harmonic Balance schemes allows easy extension to multitone analysis
Starting Page	116
Ending Page	119
File Size	323337
Page Count	4
File Format	PDF
ISBN	0780397223
DOI	10.1109/INMMIC.2006.283524
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-01-30
Publisher Place	Portugal
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	High-K gate dielectrics Poisson equations Circuit simulation Computational modeling Physics computing MOSFET circuits Hydrodynamics Numerical simulation Fourier series Frequency domain analysis Electron device modeling Computer-aided analysis
Content Type	Text
Resource Type	Article

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