NDLI: In situ SiOx interfacial layer formation for scaled ALD high-k/metal gate stacks

Content Provider	IEEE Xplore Digital Library
Author	Dentoni Litta, E. Hellstrom, P.-E. Henkel, C. Ostling, M.
Copyright Year	2012
Description	Author affiliation: Sch. of ICT, KTH R. Inst. of Technol., Kista, Sweden (Dentoni Litta, E.; Hellstrom, P.-E.; Henkel, C.; Ostling, M.)
Abstract	This work addresses the issue of interfacial layer formation in scaled high-k/metal gate stacks: the possibility of growing a thin $SiO_{x}$ interfacial layer in situ in a commercial ALD reactor has been evaluated, employing ozone-based Si oxidation. Three techniques $(O_{3},$ $O_{3}/H_{2}O$ and Pulsed) have been developed to grow scaled sub-nm interfacial layers and have been integrated in MOS capacitors and MOSFETs. A comparison based on electrical characterization shows that the performance of the proposed in situ methods is comparable or superior to that of existing ex situ techniques; specifically, the $O_{3}$ method can grow aggressively scaled interfacial layers (4-5 Å) while preserving the electrical quality of the stack.
Sponsorship	IEEE Electron Devices Soc.
Starting Page	105
Ending Page	108
File Size	316993
Page Count	4
File Format	PDF
ISBN	9781467301916
e-ISBN	9781467301923
e-ISBN	9781467301909
DOI	10.1109/ULIS.2012.6193368
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-03-06
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	high-k IL Metals High K dielectric materials Logic gates SiOx ALD Oxidation Silicon Inductors MOSFETs ozone
Content Type	Text
Resource Type	Article

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