NDLI: Analysis of resistance variations and variance-aware read circuit for cross-point ReRAM

Content Provider	IEEE Xplore Digital Library
Author	Jae-Koo Park Sang-Yun Kim Jong-Min Baek Dong-Jin Seo Jung-Hoon Chun Kee-Won Kwon
Copyright Year	2013
Description	Author affiliation: Coll. of Inf. & Commun. Eng., Sungkyunkwan Univ., Suwon, South Korea (Jae-Koo Park; Sang-Yun Kim; Jong-Min Baek; Dong-Jin Seo; Jung-Hoon Chun; Kee-Won Kwon)
Abstract	An adaptive reference control is proposed to adjust the reference current of current-mode sense amplifier (SA) for optimum read margin along with spatial distribution and temporal drift of the resistance of ReRAM cells. An ADC-based SA for distributed dummy cell is used to examine the distribution data, and binary SA with regulated reference for memory cells provides fast and reliable read in cross-point cell array. The adaptive reference control prevents yield drop due to resistance degradation after $10^{6}$ times read disturbance. Maximum read speed of disturbed ReRAM is also improved from 50ns to 28.4ns. The circuit is fabricated using 350nm CMOS technology and mounted with 1-Kb HfOx cross-point array to verify the control.
Sponsorship	IEEE Electron. Devices Soc.
Starting Page	112
Ending Page	115
File Size	634967
Page Count	4
File Format	PDF
ISBN	9781467361682
e-ISBN	9781467361699
DOI	10.1109/IMW.2013.6582111
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-05-26
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Graphical models Reference control Current measurement ReRAM Hafnium compounds Arrays Electrical resistance measurement ADC-based SA Distribution functions
Content Type	Text
Resource Type	Article

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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