NDLI: Advanced technique of vertical organic thin film transistor

Content Provider	IEEE Xplore Digital Library
Author	Khan, A.R. Siddique, J. Iyer, S.S.K.
Copyright Year	2013
Description	Author affiliation: Indian Inst. of Technol., Kanpur, Kanpur, India (Iyer, S.S.K.) \|\| Aligarh Muslim Univ., Aligarh, India (Khan, A.R.; Siddique, J.)
Abstract	The channel lengths of the top contact organic thin film transistors are usually defined during their fabrication by optical lithography or by shadow masking during the metal deposition process. Realizing short channel (sub-ten micron channel length) transistors by lithography will require costly lithography equipment. On the other hand, it is extremely challenging to achieve short channel transistors using the low cost shadow mask process. One low cost method of achieving short channel devices is to build vertical transistors with the transistor, where the channel gets defined in the vertical part of the device. This document shows that vertical channel top contact organic thin film transistor has been successfully realized on Si Substrate with $SiO_{2}$ as gate insulator and pentacene as the organic semiconductor. The active channel was defined on the vertical edge of a wide trench etched in the substrate. This helped in creating the device with channel lengths less than ten microns, much smaller than what could be typically achieved with the use of shadow masks. The sub-ten micron vertical organic thin film transistors were electrically characterized. The characteristics and transistor performance parameters estimated from these were compared with the transistor characteristics of the more standardized horizontal top contact organic thin film transistor of channel length (140μm).
Sponsorship	IEEE Uttar Pradesh Sect.
Starting Page	268
Ending Page	272
File Size	1745890
Page Count	5
File Format	PDF
ISBN	9781479912025
e-ISBN	9781479912056
DOI	10.1109/MSPCT.2013.6782133
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2013-11-23
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Pentacene Gold Thin film transistor TFT Radio Frequency Identification RFID Logic gates Organic thin film transistors Organic Thin Film Transistors OTFT Poly-thiophene PT Substrates
Content Type	Text
Resource Type	Article

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