NDLI: Energy efficient high speed CNFET based interconnect drivers for FPGAS

Content Provider	IEEE Xplore Digital Library
Author	Kadir, K.A. Hasan, M.
Copyright Year	2009
Description	Author affiliation: Dept. of Electronics Engineering Aligarh Muslim University Aligarh, India (Kadir, K.A.; Hasan, M.)
Abstract	Carbon nanotube field effect transistors (CNFETs) are already competitive in some respects with state-of-art silicon transistors, and are promising candidates for future nano-electronic devices. The ability of CNFET for using high K-dielectric provides high insulator capacitance which improves the gate control and also lowers gate leakage. This paper proposes new energy efficient CNFETs based drivers operating in the ballistic mode, for the routing interconnects of FPGAs. HSPICE simulation based on BPTM (Berkeley predictive technology model) for 32nm channel length device at operating frequency of 500MHz shows that the scaled CNFETs drivers provides very good performance even at lower supply voltage for interconnect length of 1000um. The paper shows that the different schemes of CNFETs based optimized-drivers operating at VDD=0.3v are more energy efficient than the driver operating on VDD=0.9v
Starting Page	48
Ending Page	51
File Size	470131
Page Count	4
File Format	PDF
ISBN	9781424436026
DOI	10.1109/MSPCT.2009.5164171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-03-14
Publisher Place	India
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulation Drivers Predictive models FPGA Interconnects Capacitance Energy efficiency Silicon Nanoscale devices CNTFETs Gate leakage Field programmable gate arrays CNFET Driver circuits
Content Type	Text
Resource Type	Article

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