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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tao Zhang Subramanian, V. Haase, M. |
| Copyright Year | 2010 |
| Description | Author affiliation: Microwave Engineering Lab, Berlin Institute of Technology, 10587, Germany (Tao Zhang; Subramanian, V.; Haase, M.) |
| Abstract | In this paper, the standard compact MOSFET models, the BSIM4 and the PSP, are compared up to 40 GHz. Based on the measurement results, the DC, small signal and large signal performance of these models are studied. Although both of these models show good agreements with the measurement, for cases where the gate-source voltage is slightly larger than the threshold voltage, the BSIM4 model shows accurate small signal performance. For the drain source voltage close to zero, the linearity of the PSP model is more reliable. |
| Starting Page | 32 |
| Ending Page | 35 |
| File Size | 657267 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424449330 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-03-15 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | Institut f r Mikrowellen |
| Subject Keyword | MOSFET BSIM PSP large signal analysis small signal analysis Semiconductor device modeling Power transmission lines Linearity MOSFET circuits CMOS technology Threshold voltage Foundries Power MOSFET Signal analysis Testing |
| Content Type | Text |
| Resource Type | Article |
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