NDLI: Ultra Low Noise Dielectric Resonators Oscillators with Tuning at Ku Band

Content Provider	IEEE Xplore Digital Library
Author	Liang Zhou Zhuo Wu Rui Chu Jun-Fa Mao
Copyright Year	2008
Description	Author affiliation: Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai (Liang Zhou; Rui Chu; Jun-Fa Mao) \|\| Dept. of Commun. Eng., Shanghai Univ., Shanghai (Zhuo Wu)
Abstract	This paper describes the design of very low noise, tunable, Ku band Dielectric Resonator Oscillators (DROs) presenting phase noise performance of -100 dBc/Hz at 1 kHz offset and -130 dBc/Hz at 10 kHz offset. SiGe based transistors are used for the oscillator sustaining amplifiers which offer circulating power 10 dBm and gain of 4 dB per stage as well as low flicker noise corner between 10 kHz and 40 kHz. The resonator has unloaded Q around 15,000 at operating frequency and is then optimized and coupled to the amplifiers for minimum phase noise where $Q_{L}/Q_{0}=1/2$ hence $S_{21}=-6$ dB. In order to incorporate tuning, phase shifter is also investigated. The phase noise measurement system is presented using two DROs beating at the same frequency.
Starting Page	474
Ending Page	477
File Size	3519082
Page Count	4
File Format	PDF
ISBN	9781424438211
DOI	10.1109/CJMW.2008.4772472
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-10
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Shanghai Univ.
Subject Keyword	Phase noise Low-noise amplifiers Germanium silicon alloys Frequency Dielectrics 1f noise Oscillators Tuning Gain Silicon germanium
Content Type	Text
Resource Type	Article

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