NDLI: Radiation effects in Al2O3-based MOS capacitors

Content Provider	IEEE Xplore Digital Library
Author	Salomone, L.S. Campabadal, F. Fernandez, M.I. Lipovetzky, J. Carbonetto, S.H. Inza, M.A.G. Redin, E.G. Faigon, A.
Copyright Year	2012
Description	Author affiliation: Instituto de Microelectrónica de Barcelona - Centro Nacional de Microelectrónica - Consejo Superior de Investigaciones Científicas (CSIC) (Campabadal, F.) \|\| Device Physics Laboratory - Microelectronics, Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires (Lipovetzky, J.; Carbonetto, S.H.; Inza, M.A.G.; Redin, E.G.; Faigon, A.) \|\| Device Physics Laboratory - Microelectronics, Departamento de Física, Facultad de Ingeniería, Universidad de Buenos Aires, Av. Paseo Colón 850, C1063ACV, Buenos Aires, Argentina (Salomone, L.S.; Fernandez, M.I.)
Abstract	We studied the γ-ray $(^{60}Co)$ radiation response of MOS capacitors with an atomic layer deposited Al2O3 as insulating layer up to a total dose of 6.2 kGy. Preirradiation electrical characterization showed a voltage instability for samples with an n-type substrate due to tunneling transitions between the substrate and preexisting defects inside the dielectric layer. No instability was observed in the case of p-type samples, aming them suitable for the study of the radiation effects in these devices. With respect to the radiation response, real-time capacitance-voltage (C-V) measurements showed a monotonic shift of the C-V characteristic towards negative voltages, indicating and increase of the positive trapped charge with dose, which accords with previous results in the literature. From this results the fraction of generated holes that is captured in a trap could be calculated, resulting in a value of 30%, what suggests a high trapping efficiency. Moreover, from the stretch-out of the C-V curve, an increase in the Si/Al2O3 interface trap density was observed up to 4 kGy when saturation occurred.
Starting Page	96
Ending Page	100
File Size	715848
Page Count	5
File Format	PDF
ISBN	9781467326964
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2012-08-09
Publisher Place	Argentina
Access Restriction	Subscribed
Rights Holder	EDIUNS
Subject Keyword	Radiation effects Voltage measurement Nonvolatile memory Capacitance-voltage characteristics Capacitors High-k gate dielectrics radiation monitoring Charge carrier processes radiation effects Al2O3 Aluminum oxide MOS devices
Content Type	Text
Resource Type	Article

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