NDLI: XPS investigation of InAs etching in planar inductively coupled plasma

Content Provider	IEEE Xplore Digital Library
Author	Dultsev, F.N. Kesler, V.G.
Copyright Year	2009
Description	Author affiliation: Institute of Semiconductor Physics SB RAS, Novosibirsk, Russia (Dultsev, F.N.; Kesler, V.G.)
Abstract	A method of deep etching of InAs involving ICP plasma and hydrocarbon based chemistry is proposed. Optimal conditions and the composition of the gas phase for plasmachemical etching ensuring acceptable etch rates and providing the conservation of the surface relief were revealed. The effect of the CH4/H2/Ar RF (13.56 MHz) and ICP plasma on the InAs (111)A surface composition was investigated using XPS. It was shown that plasma etching leads to arsenic depletion of the surface up to ∼18 %. Consequent chemical etching in isopropanol saturated with hydrochloric acid and vacuum annealing at 300°C restore the initial surface stoichiometry.
Starting Page	101
Ending Page	103
File Size	1141037
Page Count	3
File Format	PDF
ISBN	9781424445714
ISSN	18153712
DOI	10.1109/EDM.2009.5173941
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-07-01
Publisher Place	Russia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Infrared detectors Plasma applications Plasma Dry etching Hydrocarbons Etching Plasma devices Chemicals Plasma chemistry Plasma materials processing InAs Semiconductor device manufacture XPS Plasma temperature
Content Type	Text
Resource Type	Article

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XPS investigation of InAs etching in planar inductively coupled plasma