NDLI: Device physics and modeling of integrated power devices

Content Provider	IEEE Xplore Digital Library
Author	Adler, M.S. Pattanayak, D.N. Baliga, B.J. Temple, V.A.K. Chang, H.R.
Copyright Year	1987
Description	Author affiliation: General Electric Company (Adler, M.S.)
Abstract	In a field where the last new device, the Gate Turn-off Thyristor was invented over 25 years ago, the invention of no fewer than four new MOS controlled devices in under 10 years represents a dramatic change and rebirth. In this paper four MOS gated power switching devices are reviewed; the Insulated Gate Transistor (IGT), the Lateral IGT (LIGT), the MOS Controlled Thyristor (MCT), and the trench gate power MOSFET. These devices come singularily closer to ideal switches than any of their predecessors because of their combination of low conduction losses and ease of gating through their MOS gates. Much of the progress on these new devices has been greatly aided by the use of numerical device simulations, particularly since the physics of the devices are quite complex. The paper will serve to acquaint the reader with the properties of these devices as well as with the results of the device simulations and their role in the device development.
Starting Page	1
Ending Page	18
File Size	999888
Page Count	18
File Format	PDF
ISBN	0906783720
DOI	10.1109/NASCOD.1987.721121
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1987-06-17
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Insulated gate bipolar transistors Thyristors Insulation Switching frequency Switches MOSFET circuits Power MOSFET Voltage control P-i-n diodes
Content Type	Text
Resource Type	Article

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