NDLI: A 6–9GHz Ultra-Wideband CMOS differential LNA for China UWB standard

Content Provider	IEEE Xplore Digital Library
Author	Gao Zhendong Li Zhiqiang Zhang Haiying
Copyright Year	2010
Description	Author affiliation: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China (Gao Zhendong; Li Zhiqiang; Zhang Haiying)
Abstract	A 6–9GHz Ultra-Wideband (UWB) CMOS differential low noise amplifier (LNA) for the high frequency band of China UWB standard is proposed. Compared with the conventional band-pass filter wideband input matching, the number of inductors is saved by the high-pass filter topology presented. The virtual ground of the differential LNA formed at the ‘tail’ removes the sensitivity to parasitic ground inductance. The LNA is designed and fabricated with Chartered 0.18µm 1P6M CMOS technology. The implemented LNA achieves a maximum power gain of 13.8dB, and a noise figure of 5.49–6.95dB during 6–9GHz. The LNA including buffers dissipates a total power of 29mW from the 1.8 V power supply. Chip size is 1.7mm×1.5mm.
Starting Page	1
Ending Page	4
File Size	538294
Page Count	4
File Format	PDF
ISBN	9781424453054
e-ISBN	9781424453061
DOI	10.1109/ICUWB.2010.5614230
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-20
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Low noise amplifier (LNA) Impedance matching CMOS technology Transmission line measurements Band pass filters CMOS integrated circuits ultra-wideband (UWB) Wideband Ultra wideband technology differential
Content Type	Text
Resource Type	Article

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