NDLI: A 2–12 GHz power distributed amplifier for broadband localization- and sensor systems based on PN-sequences

Content Provider	IEEE Xplore Digital Library
Author	Sewiolo, B. Weigel, R.
Copyright Year	2008
Description	Author affiliation: Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen (Sewiolo, B.; Weigel, R.)
Abstract	In this paper the analysis, design and measurement of a 2-12 GHz power distributed amplifier for ultra-wideband localization- and sensor applications is presented. The circuit integrates four cascode gain cells, which are capacitively coupled to the base line for power optimization. The collector line has been tapered for efficiency improvement. More than 14 dBm have been measured in the desired frequency range with an associated gain of 9 dB and a gain flatness of plusmn0.5 dB with total power consumption of 250 mW. To the authors knowledge, this is the highest output power achieved by a distributed amplifier in SiGe technology in this frequency range. The chip size of the compact amplifier is 1.16 $mm^{2}$ and has been fabricated in a low-cost 0.25 mum SiGe BiCMOS technology with a transit frequency of 25 GHz. Good agreement between simulation and measurement were achieved.
Starting Page	77
Ending Page	80
File Size	224975
Page Count	4
File Format	PDF
ISBN	9781424422166
DOI	10.1109/ICUWB.2008.4653420
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-09-10
Publisher Place	Germany
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	power amplifier capacitively coupled SiGe BiCMOS Optimized production technology distributed amplifier Silicon germanium heterojunction bipolar transistors Power amplifiers Ultra-Wideband spiral inductors Impedance tapered Gain Power generation Ultra wideband technology
Content Type	Text
Resource Type	Article

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