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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Battaglia, Brian Rice, Dave Phuong Le, Gogoi, Bishnu Hoshizaki, Gary Purchine, Mike Davies, Robert Wright, Walt Lutz, Dave Gao, Mike Moline, Dan Elliot, Alex Tran, Son Neeley, Robert |
| Copyright Year | 2008 |
| Description | Author affiliation: HVVi Semiconductors, Inc. Phoenix, Arizona, 85044, USA (Battaglia, Brian; Rice, Dave; Phuong Le,; Gogoi, Bishnu; Hoshizaki, Gary; Purchine, Mike; Davies, Robert; Wright, Walt; Lutz, Dave; Gao, Mike; Moline, Dan; Elliot, Alex; Tran, Son; Neeley, Robert) |
| Abstract | The silicon vertical MOSFET RF power amplifier described in this paper is the industry’s first to utilize high voltage vertical technology. Operating under pulse conditions of 200μsec pulse width and 10% duty cycle it delivers more than 100W of peak power. Operating in Class AB with only 50mA of bias current the device achieves more than 20dB of gain and 47% power added efficiency at P1dB compression across 200MHz of bandwidth at L-Band from 1.2GHz to 1.4GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48V power supply. |
| Starting Page | 246 |
| Ending Page | 249 |
| File Size | 399172 |
| Page Count | 4 |
| File Format | |
| ISBN | 9782874870088 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-10-27 |
| Publisher Place | Netherlands |
| Access Restriction | Subscribed |
| Rights Holder | EUROPEAN MICROWAVE ASSOCI |
| Subject Keyword | Space vector pulse width modulation Radio frequency High power amplifiers Pulse amplifiers Voltage MOSFET circuits Silicon Radar applications Power MOSFET L-band |
| Content Type | Text |
| Resource Type | Article |
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