NDLI: A wideband LNA design for Ku-Band applications

Content Provider	IEEE Xplore Digital Library
Author	Wan-Rone Liou Mahendra, S.R. Tsung-Hsing Chen
Copyright Year	2010
Description	Author affiliation: Graduate Institute of Electrical Engineering, National Taipei University, 151, Univ. Road, Sanxia, 23741, Taiwan China (Wan-Rone Liou; Mahendra, S.R.; Tsung-Hsing Chen)
Abstract	A novel circuit structure of a common-gate single-stage low-noise amplifier (LNA) has been proposed in this work. The LNA has been designed for Ku-Band (12 to 18 GHz) applications using the TSMC 0.18-µm CMOS process. New analytical expressions have been derived for the noise factor of a common-gate LNA. A minimum noise figure (NF) of 4.86 dB and a maximum S21 of 10.55 dB has been obtained for the design. The circuit displays a high linearity with an IIP3 value equal to 12 dBm and P1-dB value equal to −3 dBm at the mid-band. Detailed input and output matching networks have been designed to maintain a low NF and a high gain across the band. The LNA operates from a 1.8 V supply and consumes a current of 5.56 mA excluding the output buffer.
Starting Page	680
Ending Page	684
File Size	666158
Page Count	5
File Format	PDF
ISBN	9781424482245
e-ISBN	9781424482252
DOI	10.1109/ICCCAS.2010.5581910
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-07-28
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise Capacitance Noise measurement Transistors Impedance Inductors Wideband
Content Type	Text
Resource Type	Article

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