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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiaorong Luo Bo Zhang Zhaoji Li |
| Copyright Year | 2005 |
| Description | Author affiliation: Coll. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China (Xiaorong Luo; Bo Zhang; Zhaoji Li) |
| Abstract | A new E-SIMOX high voltage device structure with shielding trench (ST) and its breakdown mechanism with a self-adapted interface charge are proposed in this paper. Based on the full continuity principle of electric displacement, the interface charges enhance the vertical electric field of the buried oxide remarkably and reduce the vertical electric field of the Si layer, which shields the Si layer from the high electric field. The vertical electric field and breakdown characteristics are researched for different device structure parameters, with ST, using a 2D device simulator. The electric field of the buried oxide increases from below 100 V//spl mu/m to about 600 V//spl mu/m. This breaks through the limitation of breakdown voltage of normal SOI devices and expands the application field of SOI devices. |
| Sponsorship | Minist. of Educ. (MOE) of PR China Hong Kong Univ. of Sci. & Technol. (HKUST) Univ. of Electron. Sci. and Technol. of China (UESTC) City Univ. of Hong Kong |
| File Size | 511977 |
| File Format | |
| ISBN | 0780390156 |
| DOI | 10.1109/ICCCAS.2005.1495368 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-05-27 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electric breakdown Large Hadron Collider Voltage Gaussian processes Doping Educational institutions Silicon Solid state circuits Bonding Dielectric devices |
| Content Type | Text |
| Resource Type | Article |
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