NDLI: A New Solar Cell Model for Evaluating Degradation of various il icon Cells at LEO and eO r its

Content Provider	IEEE Xplore Digital Library
Author	Fasooniehchi, A.R. Taherbaneh, M.
Copyright Year	2007
Description	Author affiliation: lran Telecommun. Res. Center, Tehran (Fasooniehchi, A.R.)
Abstract	In this paper a new solar cell model is presented. The model is used for evaluating the performance of various silicon solar cells in LEO and GEO. Irradiance, temperature, and accumulated dose of radiation are considered as the model's input parameters. In this research, some types of terrestrial and space-qualified silicon solar cells are investigated and evaluated. N-type-base and poly crystalline silicon are selected as terrestrial solar cells. High Efficiency Silicon (HES) cells are selected as space-qualified solar cells. The selected HES cells are bulk single-crystal silicon solar cells with 2 ohm-cm base resistivity and different cell thicknesses (2 mil and 4 mil). End Of Life (EOL) conditions for LEO and GEO orbits are assumed to be equivalent to degradation due to lMeV electron fluences of 1e15 and 5e14 $e/cm^{2},$ respectively. It is finally concluded that radiation sensitivity of poly crystalline silicon solar cell is very close to HES cell, but it has lower generated power. Also, N-type-base silicon solar cell is the most radiation sensitive cell with the lowest generated power at EOL, while HES solar cell is the least radiation sensitive cell with the highest generated power at EOL.
Starting Page	768
Ending Page	773
File Size	3733713
Page Count	6
File Format	PDF
ISBN	1424410568
DOI	10.1109/RAST.2007.4284096
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-14
Publisher Place	Turkey
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Temperature Photovoltaic cells Low earth orbit satellites Crystallization Conductivity Silicon Solar power generation Power generation Electrons
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
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