NDLI: CMOS logarithmic curvature-corrected voltage reference using a multiple differential structure

Content Provider	IEEE Xplore Digital Library
Author	Popa, C.
Copyright Year	2005
Description	Author affiliation: Fac. of Electron., Telecommun. & Inf. Technol., Univ. Politehnica of Bucharest, Bucurest, Romania (Popa, C.)
Abstract	A new superior-order curvature-corrected voltage reference will be presented. In order to improve the temperature behavior of the circuit, a double differential structure will be used, implementing the linear and the superior-order curvature corrections. An original CTAT (complementary with absolute temperature) voltage generator will be proposed, using exclusively MOS transistors biased in weak inversion for a low power operation of the voltage reference, having two great advantages: an important reducing of the circuit silicon area and an improved accuracy. The superior-order curvature-correction will be implemented by taking the difference between two gate-source voltages of subthreshold-operated MOS transistors, biased at drain currents having different temperature dependencies: PPAT (proportional with absolute temperature) and PTAT/sup 2/. In order to obtain a low-voltage operation of the circuit, the classical MOS transistor, which implements the zero-order compensated voltage reference, will be replaced by a DTMOS (dynamic threshold MOS) transistor. The SPICE simulations confirm the theoretical estimated results, showing a temperature coefficient under 9.4 ppm/K for an extended input range 173 K < T < 423K and for a supply voltage of 2.5V and a current consumption of about 1/spl mu/A.
Starting Page	413
Ending Page	416
File Size	631446
Page Count	4
File Format	PDF
ISBN	0780390296
DOI	10.1109/ISSCS.2005.1511265
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-07-14
Publisher Place	Romania
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature sensors Temperature dependence Photonic band gap Circuits Voltage CMOS technology Silicon Polynomials Diodes MOSFETs
Content Type	Text
Resource Type	Article

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