NDLI: A generic numerical model on heterodyne terahertz detection in field effect transistor

Content Provider	IEEE Xplore Digital Library
Author	Zhifeng Yan Jingxuan Zhu Xinnan Lin He, F. Guozeng Wang Zhang Yang Juncheng Cao
Copyright Year	2010
Description	Author affiliation: The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen, P. R. China (Zhifeng Yan; Jingxuan Zhu; Xinnan Lin) \|\| Shenzhen SOC Key Laboratory PKU HKUST Shenzhen Institute Shenzhen 518057, P.R. China (He, F.; Guozeng Wang; Zhang Yang) \|\| State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P. R. China (Juncheng Cao)
Abstract	The heterodyne detection characteristics of field effect transistors are studied in this paper. Based on the hydrodynamic equations which govern the terahertz signal transport in field effect MOS transistors, a numerical simulation program is developed. This program works well in all operation regions of FETs from sub-threshold to strong inversion and from linear to saturation. The work demonstrates the potential to use MOS transistors for THz detectors and the method to optimize the device structure. Simulation results agree well with the existing theory in the nonresonant situations.
Starting Page	3553
Ending Page	3557
File Size	1019088
Page Count	5
File Format	PDF
ISBN	9781424465132
e-ISBN	9781424465163
DOI	10.1109/CISP.2010.5647135
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-10-16
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Terahertz signal field effect MOS transistor Detectors Logic gates heterodyne detection Numerical models Mathematical model MOSFETs numerical simulation Plasma waves
Content Type	Text
Resource Type	Article

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