NDLI: Non-quasi-static modeling of the intrinsic Y22 for GaN, Si, and GaAs mm-wave FET technologies

Content Provider	IEEE Xplore Digital Library
Author	Crupi, G. Caddemi, A. Schreurs, D.M.M. Raffo, A. Avolio, G. Homayouni, S.M. Vannini, G.
Copyright Year	2010
Description	Author affiliation: Dipartimento di Fisica della Materia e Ingegneria Elettronica, University of Messina, 98166, Italy (Crupi, G.; Caddemi, A.; Avolio, G.; Homayouni, S.M.) \|\| Department of Engineering, University of Ferrara, 44122, Italy (Raffo, A.; Vannini, G.) \|\| Electronic Engineering Department, Katholieke Universiteit Leuven, B-3001, Belgium (Schreurs, D.M.M.)
Abstract	The extraction of accurate transistor models is essential for a reliable and efficient design of transmit/receive modules, which in turn is a keystone for the development of active electronically scanned array radars. The present paper is aimed at analysing the implementation of non-quasi-static effects for advanced millimeter-wave FET models. The non-quasi-static phenomena can be neglected at few GHz but their contributions become more and more dominant by increasing the operating frequencies. In particular, this study is focused on the investigation of the non-quasi-static effects for modeling the intrinsic short circuit output admittance for FETs based on gallium nitride, silicon, and gallium arsenide technologies. Different model solutions are carefully compared and analysed in detail.
Starting Page	316
Ending Page	319
File Size	241614
Page Count	4
File Format	PDF
ISBN	9781424472345
e-ISBN	9782874870194
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-09-30
Publisher Place	France
Access Restriction	Subscribed
Rights Holder	EUROPEAN MICROWAVE ASSOC
Subject Keyword	Solid modeling Gallium arsenide Microwave FETs Silicon Integrated circuit modeling Gallium nitride
Content Type	Text
Resource Type	Article

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