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Cell-based models for the switching statistics of RRAM

Content Provider	IEEE Xplore Digital Library
Author	Shibing Long Cagli, C. Ielmini, D. Ming Liu Sune, J.
Copyright Year	2011
Description	Author affiliation: Dipartimento di Elettronica e Informazione and Italian Universities Nanoelectronics Team (IU.NET), Politecnico di Milano, 20133 Milan, Italy (Cagli, C.; Ielmini, D.) \|\| Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, China (Ming Liu) \|\| Departament d'Enginyeria Electrònica, Universitat Autònoma de Barcelona, 08193 Bellaterra, Spain (Shibing Long; Sune, J.)
Abstract	Departing from the percolation model of dielectric breakdown, we establish a framework of analysis and modeling of the resistive switching statistics in RRAM. A deterministic model for the RESET dynamics based on the thermal dissolution of the conductive filament (CF) is incorporated into simple geometrical cell-based models to construct a complete physics-based analytical model for the RESET statistics. This model nicely accounts for the experimental VRESET and IRESET distributions in relation to the size of the CF in Pt/NiO/W devices.
Starting Page	1
Ending Page	5
File Size	749160
Page Count	5
File Format	PDF
ISBN	9781457714283
e-ISBN	9781457714313
DOI	10.1109/NVMTS.2011.6137096
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-11-07
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resistance Analytical models resistive switching statistics Electric breakdown conductive filament cell-based analytical model Switches resistive random access memory (RRAM) Reliability Approximation methods Physics
Content Type	Text
Resource Type	Article

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