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Electrical characterization and modeling of Phase Change Memory arrays

Evidence of erratic behaviors in p-channel floating gate memories and a cell architectural solution

Analysis of trap mechanisms responsible for Random Telegraph Noise and erratic programming on sub-50nm floating gate flash memories

Electrical analysis of unbalanced Flash memory array construction effects and their impact on performance and reliability

Cycling impact on the Gm degradation and GIDL current of 65nm 2T-embedded Flash memory

A full 2D and 3D TCAD simulation of ultimate 22nm NAND Flash memories

Dependence of program and erase speed on bias conditions for fully depleted channel of vertical NAND flash memory devices

Modeling of the self-heating in STTRAM and analysis of its impact on reliable memory operations

Reliability characterization of Phase Change Memory

Contact resistance of TiW to Phase Change Material in the amorphous and crystalline states

White spots on a characterization map for the phase-change memory (PCM) and threshold switches

Satellite test of radiation impact on Ramtron 512K FRAM

Electrical characterization of resistive memory in metal-Pr0.7Ca0.3MnO3 interface: A future non-volatile memory device

Impact of hydrogen on the electroforming of Pr0.7Ca0.3MnO3 resistance-change memory devices

Measurement of anisotropy in the thermal conductivity of Ge2Sb2Te5 films

Reliability issues of using barrier-engineered (BE) tunneling dielectric for floating gate flash memories

Author index

Resistive switching in $TiN/HfO_{2}/Ti/TiN$ MIM devices for future nonvolatile memory applications

Influence of interfaces on the crystallization characteristics of $Ge_{2}Sb_{2}Te_{5}$

Density functional study of Ag in $Ge_{2}Se_{3}$

2008 9th Annual Non-Volatile Memory Technology Symposium (NVMTS)

2007 Non-Volatile Memory Technology Symposium

2006 7th Annual Non-Volatile Memory Technology Symposium

Symposium Non-Volatile Memory Technology 2005.

Proceedings. 2004 IEEE Computational Systems Bioinformatics Conference

Density functional study of Ag in $Ge_{2}Se_{3}$

Content Provider	IEEE Xplore Digital Library
Author	Edwards, A.H. Campbell, K.A.
Copyright Year	2009
Description	Author affiliation: Air Force Research Laboratory, Space Electronics Branch (Edwards, A.H.) \|\| Department of Electrical and Computer Engineering, Boise State University (Campbell, K.A.)
Abstract	We present density functional calculations of isolated Ag atoms in a crystalline model for $Ge_{2}Se_{3}.$ We present defect levels for interstitial and substitutional sites. Absent other defects, we show that interstitial Ag donates an electron to the conduction band of $Ge_{2}Se_{3}$ because the highest occupied atomic level is well above the Kohn-Sham conduction band edge. Thus, we predict that Ag is always positively charged, although its charge state is fractional and significantly below +1. This results accounts for both the conductive properties of $Ge_{2}Se_{3}:Ag$ and the persistence of field-driven Ag motion. The presence of three fold-coordinated Ge alters the physics considerably. The midgap Ge states are electron sinks for the conduction electrons donated by Ag. Finally, we present evidence that Ag will displace Ge into interstitial sites, creating both dangling Ge orbitals and substitutional Ag with a strong Ag-Ge bond.
Starting Page	1
Ending Page	7
File Size	397660
Page Count	7
File Format	PDF
ISBN	9781424449538
DOI	10.1109/NVMT.2009.5465048
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-10-25
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silver Orbital calculations Temperature Laboratories Crystallization Electron mobility Germanium Metastasis Bonding Physics
Content Type	Text
Resource Type	Article

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