NDLI: RRAM switching mechanism

Content Provider	IEEE Xplore Digital Library
Author	Hsu, S.T. Zhuang, W.W. Li, T.K. Pan, W. Ignatiev, A. Papagianni, C. Wu, N.J.
Copyright Year	2005
Description	Author affiliation: Sharp Labs. of America, Camas, WA (Hsu, S.T.; Zhuang, W.W.; Li, T.K.)
Abstract	The property of PCMO RRAM memory resistors have been studied in terms of electrical pulse width, temperature dependent of resistance, trap state, and electrode effects. The PCMO material is deposited using MOD, PVD, or PLD process. The MOD PCMO is a small grain polycrystal material. The PLD PCMO is mainly having a single crystal structure, while the PVD PCMO has a large grain polycrystal structure. The experimental results clearly shown the RRAM non-volatile resistance change is neither an interface effect, nor due to field induced electro-chemical migration. In addition there is neither crystalline to polycrystalline phase change nor metallic conduction filament formation causing the resistance changes. The experimental data on the pulse width dependent of the resistance change, the temperature dependent of the resistance, and the charge transport property in PCMO with different crystalline structure lead to the conclusion that the electrical pulsed induced resistance increase is a current driven process and is due to the localization of valence electrons by electron-electron interaction. The electrical pulse induced reduction of resistance is a field driven process and is due to delocalization of localized valence electrons by high electric fields. We define the interface as the region no deeper than 1nm each side from the metal contact
Starting Page	4
Ending Page	124
File Size	234434
Page Count	121
File Format	PDF
ISBN	0780394089
DOI	10.1109/NVMT.2005.1541417
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-11-10
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Space vector pulse width modulation Electrodes Temperature dependence Nonvolatile memory Memristors Crystallization Atherosclerosis Crystalline materials Electric resistance Electrons
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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