NDLI: Piece-wise modelling - bringing the essentials of MOSFET modelling to a new student generation

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2015 Nordic Circuits and Systems Conference (NORCAS): NORCHIP & International Symposium on System-on-Chip (SoC)

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Piece-wise modelling - bringing the essentials of MOSFET modelling to a new student generation

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Proceedings Norchip Conference, 2004.

Piece-wise modelling - bringing the essentials of MOSFET modelling to a new student generation

Content Provider	IEEE Xplore Digital Library
Author	Jeppson, K.
Copyright Year	2006
Description	Author affiliation: Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg (Jeppson, K.)
Abstract	A simple MOSFET model is presented in this paper. The model focuses on simple concepts that stresses dualities (or opposites) like ON or OFF, linear or saturated operation, strong inversion or subthreshold leakage, etc. The model treats velocity saturation as a first-order effect and leads naturally to industry standard BSIM models, but still retains a close resemblance to classical '"square-law" models. Despite its simplicity the model shows a good fit to experimental data (in this case exemplified by Intel 60 nm trigate transistor data)
Starting Page	99
Ending Page	102
File Size	4410374
Page Count	4
File Format	PDF
ISBN	1424407729
DOI	10.1109/NORCHP.2006.329253
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-11-20
Publisher Place	Sweden
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Semiconductor materials Semiconductor devices Moore's Law MOS capacitors MOSFET circuits Threshold voltage Silicon Transistors Subthreshold current Stress
Content Type	Text
Resource Type	Article

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