NDLI: Mathematical analysis and simulation for the electrostatic discharge (ESD) according to the EN 61000-4-2

Content Provider	IEEE Xplore Digital Library
Author	Fotis, G.P. Gonos, I.F. Iracleous, D.P. Stathopulos, I.A.
Copyright Year	2004
Description	Author affiliation: Electr. Power Dept., Nat. Tech. Univ. of Athens, Greece (Fotis, G.P.; Gonos, I.F.; Iracleous, D.P.; Stathopulos, I.A.)
Abstract	The paper is a study for the better understanding of electrostatic discharge (ESD). Electrostatic discharge can change the electrical characteristics of a semiconductor device, degrading or destroying it. Both a mathematical analysis and a simulation process of the ESD generator circuit of the European Standard 61000-4-2 are presented. In the mathematical aspect of the problem, the differential equations for different types of EUT (equipment under test) are solved. A computer simulation of the two types of EUT circuits is shown, using both PSPICE and Matlab programs. A comparison between theoretical results of the mathematical analysis and the two simulation processes is obtained. Finally, conclusions for the ESD phenomenon are presented.
Sponsorship	IEEE PES IEE Cigre NGT EDF Energy WUHAN HI-TECH
Starting Page	228
Ending Page	232
File Size	739269
Page Count	5
File Format	PDF
ISBN	1860433650
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-06
Publisher Place	UK
Access Restriction	Subscribed
Rights Holder	UWE
Subject Keyword	Degradation Analytical models Computational modeling Circuit simulation Semiconductor devices Mathematical analysis Electrostatic discharge Differential equations Electric variables Circuit testing
Content Type	Text
Resource Type	Article

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