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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Touati, F. |
| Copyright Year | 2007 |
| Description | Author affiliation: Sultan Qaboos Univ., Muscat (Touati, F.) |
| Abstract | High gain, wide bandwidth, low noise, and low-power transimpedance amplifiers based on new BiCMOS common-base topologies have been designed for fiber-optic receivers. In particular a design approach, hereafter called "a more-FET approach", added a new dimension to effectively optimize performance tradeoffs inherent in such circuits. Using conventional silicon 0.8 mum process parameters, simulated performance features of a total-FET transimpedance amplifier operating at 7.2 GHz, which is close to the technology $f_{T}$ of 12 GHz, are presented. The results are superior to those of similar recent designs and comparable to IC designs using GaAs technology. A detailed analysis of the design architecture, including a discussion on the effects of moving toward more FET-based designs is presented. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 239491 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424416387 |
| DOI | 10.1109/ICTONMW.2007.4446950 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2007-12-06 |
| Publisher Place | Tunisia |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Low-noise amplifiers transimpedance BiCMOS amplifier Optical receivers Design optimization Optical fiber amplifiers Circuit topology Optical design Bandwidth 0.8 um silicon technology BiCMOS integrated circuits low power Circuit noise Optical noise optical receiver |
| Content Type | Text |
| Resource Type | Article |
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