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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hung-Cheng Lin Geng-Yen Lee Hsueh-Hsing Liu Nai-Wei Hsu Chin-Chi Wu Jen-Inn Chyi |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Electrical Engineering, National Central University, Jhongli, Taiwan, R.O.C. (Hung-Cheng Lin; Geng-Yen Lee; Hsueh-Hsing Liu; Nai-Wei Hsu; Chin-Chi Wu; Jen-Inn Chyi) |
| Abstract | Electrical properties of low-temperature grown Mg-modulation-doped InGaN/GaN superlattice (MD-SLS) for green light-emitting diodes (LEDs) are investigated. Room-temperature Hall effect measurements indicate that the MD-SLS has conductivity comparable to that of high-temperature grown p-type GaN. The light output intensity of green LEDs with the p-InGaN/GaN MD-SLS is approximately doubled as compared with that of the LEDs with a high-temperature grown p-GaN. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 322083 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781557528698 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-02 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | OSA |
| Subject Keyword | Atomic force microscopy Optical polarization Epitaxial layers Laser sintering Surface morphology (230.3670) Light-emitting diodes Doping Conductivity Light emitting diodes (250.5590) Quantum-well, -wire and -dot devices Optical superlattices Gallium nitride |
| Content Type | Text |
| Resource Type | Article |
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