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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Navarro, A. Del Valle, J.L. |
| Copyright Year | 2006 |
| Description | Author affiliation: CINVESTAV-Guadalajara, Jalisco (Navarro, A.; Del Valle, J.L.) |
| Abstract | Voltage generators based on Schottky diodes have been the preferred design option to build passive tags for RFID applications. The main design constrains are commonly supply DC voltage, load current, carrier frequency, and antenna radiation resistance. In spite of this scenario the work described in this paper has applied the design methodology presented to determine basic design parameters: Schottky diode's size, stage's number of the circuit and also the necessary available power to cope with design's specifications. Since Schottky diodes is not an available device of our 0.5 mum CMOS facilities, we have designed them by applying technological design rules of that technology. To do that, the I-V and C-V characteristics were simulated firstly on ISE by considering basics on semiconductor physics. From simulations results we have found that are needed three stages in order to supply the needed current and voltage |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 360854 |
| Page Count | 4 |
| File Format | |
| ISBN | 1424404029 |
| DOI | 10.1109/ICEEE.2006.251863 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2006-09-06 |
| Publisher Place | Mexico |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Schottky diodes Design methodology Capacitance-voltage characteristics Circuit simulation Passive tags RFID Passive RFID tags Loaded antennas Physics CMOS RF Mixed Mode Integrated circuits Voltage CMOS technology Frequency micro power generators |
| Content Type | Text |
| Resource Type | Article |
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