NDLI: Two Dimensional 32×32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination

Content Provider	IEEE Xplore Digital Library
Author	Eun Soo Nam Oh, M.S. Hong, S.E. Kim, H.S.
Copyright Year	2006
Description	Author affiliation: ETRI, Daejeon (Eun Soo Nam; Oh, M.S.; Hong, S.E.)
Abstract	In the 2 dimensional InGaAs/InP photodiode arrays on semi-insulating InP the dark current is limited by the diffusion and generation- recombination. The static dark current of the InGaAs/InP PiN photodiode arrays is proportional to the number of the pixels in the array. In PiN InGaAs photodiode array structure, the diffusion currents of the each pixel due to the thermally generated minority carriers diffusing into the depletion region are accumulated to reach total leakage current. This phenomenon of pixel number dependent leakage current is due to the accumulation of the contributed diffusion current as much as ~0.02 $pA/cm^{-2}$ from the each pixel photodiode comprising the array.
Starting Page	78
Ending Page	80
File Size	1145622
Page Count	3
File Format	PDF
ISBN	9788995530146
DOI	10.1109/COINNGNCON.2006.4454569
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-07-09
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	OSIA
Subject Keyword	Image sensors Temperature sensors Fabrication PIN photodiodes Character generation Dark current Indium gallium arsenide Leakage current Indium phosphide Sensor arrays
Content Type	Text
Resource Type	Article

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Two Dimensional 32×32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination