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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yadav, R.C. Lee, K.S. Bharadwaj, V. |
| Copyright Year | 2005 |
| Description | Author affiliation: Lab. of Integrated Circuits & Syst., Institute of Microelectronics, Singapore, Singapore (Yadav, R.C.) |
| Abstract | A band-pass filter operating in 2.40 GHz to 2.48 GHz range is designed in 0.18 /spl mu/m CMOS technology. It has tunable center frequency, Q-factor and gain. The fully integrated system-on-chip (SOC) 10th order band-pass filter is built by cascading five stages of 2nd order. The simulation of the filter on ADS software provides an insertion gain of 8 dB in the pass-band frequency from 2.40 GHz to 2.48 GHz. The attenuation in the stop-band is observed to be higher than 50 dB at 400 MHz away from pass-band edge with 15 mA current sinking from a 1.8 V supply. We present several simulation results to highlight these characteristics. |
| Starting Page | 191 |
| Ending Page | 194 |
| File Size | 1084795 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780393724 |
| DOI | 10.1109/RFIT.2005.1598908 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2005-11-30 |
| Publisher Place | Singapore |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Resistors Q factor Circuits radio-frequency (RF) Q-enhancement Reflection Inductors MOSFETs quality factor CMOS high order filter active filter Frequency CMOS technology Band pass filters Impedance |
| Content Type | Text |
| Resource Type | Article |
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