NDLI: Fabrication and characterization of lateral field emission device based on carbon nanotubes

Content Provider	IEEE Xplore Digital Library
Author	Tsai, C.C. Juan, C.P. Chen, K.J. Chen, K.H. Chen, L.C. Cheng, H.C.
Copyright Year	2003
Description	Author affiliation: Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan (Tsai, C.C.; Juan, C.P.; Chen, K.J.)
Abstract	A lateral field emission device based on carbon nanotubes (CNTs) is proposed and the experimental results are reported. In this method, the distance between polysilicon anode and the CNTs cathode was determined by the wet etching process. Thus, the interelectrode gap is easily formed in good uniformity and reproducibility with dimensions below 1 micrometer. The CNTs were selectively grown with microwave plasma enhanced chemical vapor deposition system (MPCVD). The turn-on voltage of the fabricated device with interelectrode gap of 0.6 /spl mu/m is as low as 2 volt, and the emission current density is as high as 4 mA/cm at 20 volt. The emission current fluctuation is about /spl plusmn/15% for 2100 sec.
Starting Page	235
Ending Page	236
File Size	58980
Page Count	2
File Format	PDF
ISBN	4818195154
DOI	10.1109/IVMC.2003.1223070
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2003-07-07
Publisher Place	Japan
Access Restriction	Subscribed
Rights Holder	American Vacuum Society
Subject Keyword	Fabrication Carbon nanotubes Anodes Cathodes Wet etching Reproducibility of results Microwave devices Plasma applications Plasma chemistry Plasma density
Content Type	Text
Resource Type	Article

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Fabrication and characterization of lateral field emission device based on carbon nanotubes