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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhang, V.Y. Lefebvre, J.E. Gryba, T. |
| Copyright Year | 2001 |
| Description | Author affiliation: Inst. d'Electronique et de Microelectronique du Nord, Villeneuve d'Ascq, France (Zhang, V.Y.) |
| Abstract | In this paper, characteristics of the lowest order SAW mode in a ZnO film on a GaAs structure are studied. Velocity and coupling coefficient (K/sup 2/) are calculated versus film thickness, film polarity orientation, and interdigital transducer (IDT) location. It is found that velocity varies with the product of the frequency and film thickness (fh), K/sup 2/ increases nearly monotonically with fh when the IDT's are located on the upmost surface with an interface free of metallization. When the interface is metallized, K/sup 2/ exhibits a maximum value of 1% for fh=230 m/s and a minimum value of 0.5% for fh=750 m/s. Burying the IDT at the interface gives rise to a higher K/sup 2/ (1.5% for fh=1500 m/s). These results are obtained using a (+Z)-oriented ZnO film, those with a (-Z)-oriented one are also given for comparison. Also given is the SAW displacement-potential ratio directly involved in the determination of the inter-electrode reflectivity. |
| Sponsorship | Ultrasonics, Ferroelectr., & Frequency Control Soc |
| Starting Page | 261 |
| Ending Page | 264 |
| File Size | 311686 |
| Page Count | 4 |
| File Format | |
| ISBN | 0780371771 |
| DOI | 10.1109/ULTSYM.2001.991622 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2001-10-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Surface acoustic waves Zinc oxide Gallium arsenide SAW filters Electrostatic precipitators Substrates Surface waves Frequency Metallization Optical films |
| Content Type | Text |
| Resource Type | Article |
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