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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shumin Wang Kai Wang Yi Gu Wenwu Pan Xiaoyan Wu Liyao Zhang Yaoyao Li Qian Gong |
| Copyright Year | 2014 |
| Description | Author affiliation: State Key Lab. of Functional Mater. for Inf., Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China (Shumin Wang; Kai Wang; Yi Gu; Wenwu Pan; Xiaoyan Wu; Liyao Zhang; Yaoyao Li; Qian Gong) |
| Abstract | InPBi crystalline thin films with a bismuth concentration up to 4.8% have been successfully grown using molecular beam epitaxy for the first time. This novel material reveals strong and broad photoluminescence in the wavelength range of 1-2.5 μm at room temperature, although the absorption measurements point out a near band-gap absorption character. Various structural and optical characterization techniques are used to assess material quality and to understand the physical origins of the unexpected light emission. The InPBi is almost lattice matched to InP, making such a material very promising for InP based optoelectronics devices. The emitted light covers the telecom wavelength regime as well as other important wavelengths for gas sensing. The very broad emission spectrum of more than 600 nm promises for making super-luminescence IR diodes that have potentials to significantly enhance the spatial resolution in optical coherence tomography (OCT). |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 608904 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781479956012 |
| ISSN | 21612064 |
| DOI | 10.1109/ICTON.2014.6876587 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2014-07-06 |
| Publisher Place | Austria |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Bismuth Indium phosphide Optical films Molecular beam epitaxial growth Integrated optics Superluminescent diodes optical coherence tomography dilute bismide InPBi molecular beam epitaxy photoluminescence super-luminescence IR diode |
| Content Type | Text |
| Resource Type | Article |
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