NDLI: Thermoelectric properties of Hf polycrystals with high density

Content Provider	IEEE Xplore Digital Library
Author	Iwasaki, H. Sato, T. Ohno, Y. Hasumi, K.
Copyright Year	2007
Description	Author affiliation: Sch. of Mater. Sci., JAIST, Nomi (Iwasaki, H.; Sato, T.; Ohno, Y.; Hasumi, K.)
Abstract	$Hf_{1-x}Zr_{x}Te_{5},$ which is expected to have high thermoelectric performance at low temperature, is investigated on polycrystals with high density. in order to examine the possibility of large enhancement of the figure of merit at low temperature, polycrystalline samples of $Hf_{1-x}Zr_{x}Te_{5}$ (x=0.0, 0.5 and 1.0) are systhesized by hot-press sintering to make high density above ~90%. Resultant polycrystals show anisotropy in the resistivity between parallel (//) and perpendicular (perp) sample is approximately twice smaller than that for // one and this behavior can come from the anisotropic resistivity in the single crystal of this system. Similar anisotropic behaviors are observed for all $Hf_{1-x}Zr_{x}Te_{5}$ samples. The figure of merit of $HfTe_{5}$ increases largely by substituting Zr. ZT of $ZrTe_{5}and$ $Hf_{0.5}Zr_{0.5}Te_{5}$ is ~0.1 at 300 K, which is 6 times larger than that of $HfTe_{5}.$ The reduction iof the resistivity is responsible to this enhancement of ZT in both samples. In the present paper, thermoelectric properties of $Hf_{1-x}Zr_{x}Te_{5}$ are discussed from the viewpoint of the sample preparation condition and the anisotropy in this system.
Starting Page	260
Ending Page	262
File Size	346953
Page Count	3
File Format	PDF
ISBN	9781424422623
ISSN	10942734
DOI	10.1109/ICT.2007.4569474
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2007-06-03
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Thermoelectricity Hafnium
Content Type	Text
Resource Type	Article

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