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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hagelstein, P. Kucherov, Y. |
| Copyright Year | 2003 |
| Description | Author affiliation: MIT, Cambridge, MA, USA (Hagelstein, P.) |
| Abstract | We present our first results from a new model for analyzing the current and voltage relations of semiconductor thermoelectric structures where the associated spatial structures are on the order of a scattering length. The model derives from a formal solution to the transport equation in the relaxation time approximation, and leads to a nonlocal dependence of current on the temperature, potential and Fermi level. We report here results from this model applied to an idealized model for the emitter region of an n-type thermal diode structure with a p-type separation layer. Our results in the case of thermal diode structures are consistent with a forward current injection mechanism (second-order thermionic emission), where the p-type separation layer now prevents the shorting out of a Fermi level discontinuity. |
| Starting Page | 554 |
| Ending Page | 557 |
| File Size | 320437 |
| Page Count | 4 |
| File Format | |
| ISBN | 078038301X |
| DOI | 10.1109/ICT.2003.1287573 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-08-17 |
| Publisher Place | France |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermoelectricity Voltage Thermoelectric devices Semiconductor diodes Short circuit currents Electrical resistance measurement Contact resistance Cities and towns Scattering Equations |
| Content Type | Text |
| Resource Type | Article |
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