NDLI: Comparison of Hetero and Mono FET and BT Structures Hrvoje Ocevcic, Tomislav Svedek

Content Provider	IEEE Xplore Digital Library
Author	Ocevcic, H. Svedek, T.
Copyright Year	2005
Description	Author affiliation: Dilj d.d., Vinkovci (Ocevcic, H.)
Abstract	The properties of hetero and mono FET and BT devices are reviewed and discussed in the context of their suitability for high frequency and noise. GaAs based devices have a defined place in commercial and many more applications. The heterojunction bipolar transistor (HBT) basically is a modified bipolar transistor. The emitter and base layers are formed with different bandgap material. The emitter having the wider band gap, thus the emitter delivers a barrier against the hole injection into the base. HBT technology has become a major player in wireless communication, power amplifier, mixer, and frequency synthesizer applications. HBTs extend the advantages of silicon bipolar transistors to significantly higher frequencies. The HEMT delivers the lowest noise figure with a high gain performance. This high gain in some cases is a disadvantage for problem free volume applications in low frequency range
Starting Page	597
Ending Page	600
File Size	3267732
Page Count	4
File Format	PDF
ISBN	0780391640
DOI	10.1109/TELSKS.2005.1572184
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2005-09-28
Publisher Place	Serbia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MONOS devices FETs Frequency Heterojunction bipolar transistors Bipolar transistors Photonic band gap Acoustical engineering Gallium arsenide Wireless communication Power amplifiers noise Heterojunction HEMT HBT frequency
Content Type	Text
Resource Type	Article

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