NDLI: Separation of NBTI component from channel hot carrier degradation in pMOSFETs focusing on recovery phenomenon

Content Provider	IEEE Xplore Digital Library
Author	Mitani, Y. Fukatsu, S. Hagishima, D. Matsuzawa, K.
Copyright Year	2011
Description	Author affiliation: Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522 Japan (Mitani, Y.; Fukatsu, S.; Hagishima, D.; Matsuzawa, K.)
Abstract	Channel hot-carrier (CHC) degradation becomes more critical as the channel length is reduced. In general, CHC degradation is evaluated using DC stress applying both gate and drain bias. However, in the case of p-channel MOSFETs, negative bias temperature instabilities (NBTI) also degrades threshold voltage (V) and saturation drain current (I) under DC stress applying gate bias. Therefore, CHC degradation might include the NBTI component, which would lead to over-estimate the CHC degradation. Therefore, a separation of the BTI component from CHC degradation is necessary to predict device lifetime more accurately. In this study, a simple separation method of NBTI and CHC component from CHC test data is proposed, focusing on the recovery phenomenon, which is a distinctive behavior of NBTI.
Starting Page	1
Ending Page	4
File Size	881929
Page Count	4
File Format	PDF
ISBN	9781424490196
e-ISBN	9781424490219
DOI	10.1109/ICICDT.2011.5783215
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-05-02
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Degradation Stress Logic gates MOSFETs Hot carriers Substrates Recovery Reliability Channel hot carrier NBTI pMOSFET Threshold voltage
Content Type	Text
Resource Type	Article

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