NDLI: Self sensing cantilevers for the measurement of (biomolecular) forces

Content Provider	IEEE Xplore Digital Library
Author	Tosolini, G. Perez-Murano, F. Bausells, J. Villanueva, L.G.
Copyright Year	2011
Description	Author affiliation: Institut de Microelectronica de Barcelona, IMB-CNM, (CSIC), 08193 Bellaterra, Spain (Tosolini, G.; Perez-Murano, F.; Bausells, J.) \|\| California Institute of Technology, 91125 Pasadena, CA, USA (Villanueva, L.G.)
Abstract	We present the fabrication and the testing of self sensing submicron thick piezoresistive cantilevers. Two kind of piezoresistive transducers (piezoresistor and MOSFET transistor) are integrated into the cantilever in the (100) direction, by n-type implantation (As). Cantilevers with both types of transducers are successfully fabricated, showing a yield of 100% and a standard deviation in the electrical characteristics of 6% and 10% for the piezoresistors and MOSFETs, respectively. For the best piezoresistive cantilever design we report an averaged force responsivity of 158 µV/nN, an averaged noise value of 5.87 µV (1 Hz–1 kHz) and finally a minimum detectable force (MDF) of 37 pN. The cantilever will be used as force sensors for label-free detection of bio-molecules by measuring the intermolecular forces between ligands and receptors.
Starting Page	1
Ending Page	4
File Size	831629
Page Count	4
File Format	PDF
ISBN	9781424478637
e-ISBN	9781424478651
DOI	10.1109/SCED.2011.5744171
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-02-08
Publisher Place	Spain
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Piezoresistance MOSFET circuits Force Noise Etching Resistors force sensor piezoresistive cantilever MOSFET cantilever
Content Type	Text
Resource Type	Article

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