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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Maniruzzaman, M. Noya, A. |
| Copyright Year | 2008 |
| Description | Author affiliation: Electron. & Commun. Eng. Discipline, Khulna Univ., Khulna (Maniruzzaman, M.) || Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Kitami (Noya, A.) |
| Abstract | The [110]-textured extremely thin Nb barrier layer is prepared on an amorphous $SiO_{2}$ substrate, on which the preferentially oriented Cu [111] texture is obtained. Transmission Electron Microscopy (TEM) observation indicates that nanocrystalline grains no larger than ~10 nm with a spread [110] orientation along the substrate normal direction is characteristic of a 10 nm thick Nb barrier on $SiO_{2},$ whereas for the 100 nm thick barrier, the well-oriented columnar structure of a Nb [110] layer is obtained by ordering the orientation during the increase in the thickness of the Nb film by the coalescence of the initially deposited nanocrystalline grains. The quality of Cu [111] layer is much better when deposited on 100 nm thick Nb layer than that on a 10 nm thick barrier. |
| Starting Page | 812 |
| Ending Page | 815 |
| File Size | 497306 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424420148 |
| DOI | 10.1109/ICECE.2008.4769322 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-12-20 |
| Publisher Place | Bangladesh |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium Integrated circuit interconnections Insulation Transmission electron microscopy Substrates Electric resistance Transistors DH-HEMTs Amorphous materials Electromigration |
| Content Type | Text |
| Resource Type | Article |
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