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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shih-Chieh Shin Dawn, D. Yeh, D. Laskar, J. |
| Copyright Year | 2011 |
| Description | Author affiliation: Samsung Electro-Mechanics America, Inc., Atlanta, Georgia, 30308 U.S.A (Yeh, D.) || School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, 30308 U.S.A (Shih-Chieh Shin; Dawn, D.) |
| Abstract | This paper presents a systematic design methodology of millimeter wave (mm-wave) CMOS tuned amplifier which, for the first time to the best of authors' knowledge, takes the model inaccuracy at mm-wave frequencies into design consideration. Millimeter-wave models for both passive and active components are developed based on the standard foundry provided models with extra critical variation components which represent modeling uncertainties. The proposed model is verified through a comparison with the measured results of the test structures. The design methodology of tolerating the modeling uncertainties is demonstrated by a design example of a 65nm CMOS 57–64 GHz low noise amplifier, which has a 20 dB gain and a minimum 5 dB noise figure with 26 mA current consumption under 1 V supply. |
| Starting Page | 1 |
| Ending Page | 6 |
| File Size | 988972 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781612840819 |
| e-ISBN | 9781612840802 |
| DOI | 10.1109/WAMICON.2011.5872876 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2011-04-18 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Logic gates Capacitors Transmission line measurements Foundries Power transmission lines Inductors Shunt (electrical) low noise amplifier (LNA) millimeter-wave (mmW) CMOS tuned-amplifier |
| Content Type | Text |
| Resource Type | Article |
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