NDLI: A Linearized Cascode CMOS Power Amplifier

Content Provider	IEEE Xplore Digital Library
Author	Sangwon Ko Jenshan Lin
Copyright Year	2006
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL (Sangwon Ko; Jenshan Lin)
Abstract	In this paper, an RF predistorter linearizer compatible with a CMOS process is proposed. The predistorter uses a diode connected MOSFET as a nonlinearity generation circuit. A negative or positive AM-PM characteristic is obtained from the predistorter by inserting a capacitor or an inductor in parallel with the predistorter. A 5.8 GHz cascode CMOS power amplifier was designed using a 0.18-mum 1P6M mixed-mode CMOS process and a predistorter was customized for the cascode power amplifier and integrated with it. The gain and phase distortion of the power amplifier were compensated and the simulation result of the cascode power amplifier shows a 29.3-dB improvement in the third order inter-modulation distortion when the predistorter is turned on.
Starting Page	1
Ending Page	4
File Size	3498100
Page Count	4
File Format	PDF
ISBN	1424408482
DOI	10.1109/WAMICON.2006.351920
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-04
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Power amplifiers MOSFET circuits Schottky diodes Semiconductor diodes CMOS process Linearization techniques Capacitors High power amplifiers Impedance Radiofrequency amplifiers predistorter AM-AM AM-PM CMOS linearization power amplifiers
Content Type	Text
Resource Type	Article

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