NDLI: Evaluation of R-F Noise Measurements for Diode Reliability Improvement by the Elimination of Weak Units

Content Provider	IEEE Xplore Digital Library
Author	Kirvida, L. Maronde, C.
Copyright Year	1964
Description	Author affiliation: Honeywell Inc, Aeronautical Division, Minneapolis, Minnesota (Kirvida, L.; Maronde, C.)
Abstract	ASTUDY of the noise characteristics of a general purpose silicon diode (type 1 N645) was made to determine whether excessive r-f noise is correlated with high failure rates. The selection of the abnormally high noise diodes was made by monitoring the noise level across the diode as it was excited with an a-c voltage within the diode maximum ratings. Mechanical stress in the form of impacts within the rated value was applied simultaneously to aggravate structural imperfections. Noise measurements at 25 mc were used for the recognition of weaknesses and early failure. The forward and reverse characteristics were obtained for the diodes exhibiting high r-f noise. These were compared with the characteristics of diodes exhibiting normal r-f noise. In the forward direction, no difference was obtained; in the reverse biased condition, the average leakage current of all the noisy diodes was considerably higher than the average of the quiet group. In addition it was noted that the r-f noise level of the diodes was almost inversely proportional to the avalanche breakdown voltage. The diodes were also tested for 1/f noise; 35% of the r-f noisy diodes also exhibited high 1/f noise, whereas only 1.2% of the diodes having normal r-f noise exhibited high I/f noise. The noise spectrum taken on a number of the silicon diodes indicates that the 1/f noise extends into the megacycle region.
Starting Page	15
Ending Page	29
File Size	12034467
Page Count	15
File Format	PDF
ISSN	00972088
DOI	10.1109/IRPS.1964.362276
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	1964-09-29
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Noise measurement Diodes Noise level Silicon Condition monitoring Stress Leakage current Avalanche breakdown Breakdown voltage Testing
Content Type	Text
Resource Type	Article

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