NDLI: Switching Simulation of Si-GTO, SiC-GTO and Power MOSFET

Content Provider	IEEE Xplore Digital Library
Author	Sujod, M.Z. Sakata, H.
Copyright Year	2006
Description	Author affiliation: Fac. of Electr. & Electron. Eng., Univ. Coll. of Eng. & Technol., Pahang (Sujod, M.Z.)
Abstract	Recent development in power electronics has made power semiconductor devices larger and more complicated, and device simulation is necessary to predict their characteristics. From the fundamental equations of semiconductor devices, potential distribution and carrier concentrations can be solved using the finite element method (FEM), silicon carbide (SiC) material has been utilized for power devices, in order to achieve fast switching time and low switching loss. In this study, we use our FEM device simulator and compare the switching waveforms of usual silicon gate turn off thyristor (Si-GTO) and new SiC-GTO. Results show that turn off time of SiC-GTO is decreased extremely. The merits of devices simulation are not only to predict switching characteristics but also to observe inner phenomena of semiconductor device. In this study, we also analyzed switching characteristics of power metal oxide semiconductor field effect transistor (MOSFET) and make discussions on the inner phenomena of this device.
Starting Page	488
Ending Page	491
File Size	3928905
Page Count	4
File Format	PDF
ISBN	1424402735
DOI	10.1109/PECON.2006.346700
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-11-28
Publisher Place	Malaysia
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	MOSFET circuits Power MOSFET Power semiconductor switches Predictive models Semiconductor devices Silicon carbide Power electronics Power semiconductor devices Equations Finite element methods Power Metal Oxide Semiconductor Field Effect Transistor and Finite Element Method Silicon Carbide Gate Turn Off Thyristor
Content Type	Text
Resource Type	Article

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Numerical simulation of SiC GTO thyristor using finite element analysis

Simulation Study on the Performance of SiC-GTO

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Design of a gate driver for SiC MOSFET module for applications up to 1200 V

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Experimental Comparison of High-Speed Gate Driver Design for 1.2-kV/120-A Si IGBT and SiC MOSFET Modules

Design of high-speed gate driver to reduce switching loss and mitigate parasitic effects for SiC MOSFET

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Switching Simulation of Si-GTO, SiC-GTO and Power MOSFET

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