NDLI: Growth methods of AIII-N materials on silicon substrates

Content Provider	IEEE Xplore Digital Library
Author	Wosko, M. Paszkiewicz, R.
Copyright Year	2004
Description	Author affiliation: Wydziat Elekironiki Mikrosystemow i Foloniki, Politechnika Wroclawska, ul. Janiszewskiego 11/17, 50-372 Wroclmu (Wosko, M.; Paszkiewicz, R.)
Abstract	AIII-N materials (AI, Ga, 1n)N have found a wide range of application in modern electronics. Their unique properties made them attractive for production of optical devices operating in the ultraviolet to visible spectral range and for high frequency and high power electronics. The lack of high volume, monocrystaline GaN substrate caused that device multilayers must be grown on heteroepitaxial substrates: sapphire or silicon carbide. The elaboration of the growth process of nitride layer on silicon substrates will increase the application area of nitride based devices and reduce the cost of their fabrication. The application of new buffer layers and the growth on patterned silicon substrates has been proposed as a method of obtaining high guality GaN/Si layers. The paper presents the results of experimental work performed at the Faculty of Microsystem Electronics and Photonics. The details of the growth process and the characteristics of GaN layer deposited by MOVPE technique are presented and discussed.
Starting Page	61
Ending Page	63
File Size	494182
Page Count	3
File Format	PDF
ISBN	0780385985
DOI	10.1109/STYSW.2004.1459945
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2004-09-08
Publisher Place	Mexico
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Substrates Gallium nitride Epitaxial growth Buffer layers Epitaxial layers Temperature Gallium arsenide Tin Nonhomogeneous media
Content Type	Text
Resource Type	Article

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